MG25J6ES40-TOSHIBA Desc The dual configuration integrates two

The dual configuration integrates two IGBT switches with freewheeling diodes in a compact

Integrated gate-emitter structure optimized for compatibility with standard IGBT gate drive circuits (typically ±15V)

simplifying thermal interface design in drive and rectifier assemblies

and obsolete power semiconductors so your operation does not have to stop while the supply chain catches up

MG25J6ES40-TOSHIBA Desc The dual configuration integrates twoThe Toshiba MG25J6ES40 is a high performance IGBT module engineered for demanding power electronics applications. Rated at 25 amperes and 600 volts, this module delivers reliable switching performance with low collector emitter saturation voltage, making it an excellent choice for compact and efficient power conversion designs. Toshiba's proven IGBT technology ensures consistent performance across a wide range of operating conditions, including